TLN227 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – LEAD FREE PRODUCT FOR SPACE-OPTICAL-TRANSMISSION

Relative P_O – T_a
(typ.)
10
IF = 50mA
1
0.1
−50 −25
0
25
50
75 100 125
Ambient temperature Ta (°C)
Wavelength Characteristic
(typ.)
1.0
IF = 50mA
0.8
0.6
0.4
0.2
0
800
840
880
920
960
1000
Wavelength λ (nm)
TLN227(F)
Distance Characteristics
1000
100
Pop = 23mW at IFP = 180mA,
f = 100kHz, duty = 50%
10
Po = 14mW at IF = 50mA
1
0.1
0.01
0.1
1
10
Distance d (m)
Radiation Pattern (typ.)
Ta = 25°C
20° ^10°
0°
10°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
90°
0 0.2 0.4 0.6 0.8 1.0
Relative radiant power
Frequency Characteristic (typ.)
4
2
0
−2
−4
−6
−8
−10
0.1
0.3 0.5 1
3 5 10
Frequency f (MHz)
30 50 100
4
2004-01-06