TLN227 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – LEAD FREE PRODUCT FOR SPACE-OPTICAL-TRANSMISSION

TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN227(F)
Lead Free Product
For Space−Optical−Transmission
• High radiant power: Po = 18mW (typ.) at IF = 50mA
• Wide half−angle value: = θ1 / 2 ± 21° (typ.)
• High−speed response: t_r, t_f = 30ns (typ.)
• Light source for remote control
• Designed for transmission of wireless AVsignals purpose.
• Designed for high−speed data transmission
TLN227(F)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Pulse forward current
Power dissipation
Reverse voltage
Operating temperature
Storage temperature
Soldering temperature (5s)
I_F
100
mA
I_FP
1000
(Note 1)
mA
P_D
220
mW
V_R
4
V
T_opr
−25~85
°C
T_stg
−30~100
°C
T_sol
260
°C
(Note 1): Frequency = 100kHz, duty = 1%
TOSHIBA
4-6J1
Pin Connection
1. Anode
1
2 _{2. Cathode}
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Forward voltage
Reverse current
Radiant power
Radiant intensity
Rise time, fall time
Cut−off frequency
Capacitance
Peak emission wavelength
Spectral line half width
(Note 2)
Half value angle
V_F
I_F = 100mA
I_R
V_R = 4V
P_O
I_F = 50mA
I_E
I_F = 50mA
tr, tf
I_FP = 100mA, P_W = 100ns
fc
I_F = 50mA_DC + 5mAp−p
C_T
V_R = 0, f = 1MHz
λ_P
I_F = 50mA
∆λ
I_F = 50mA
θ¹
2
I_F = 50mA
―
1.8
2.2
V
―
―
60
µA
14
18
―
mW
―
100
― mW / sr
―
30
―
ns
10
15
―
MHz
―
110
―
pF
830
870
900
nm
―
50
―
nm
―
±5
―
°
(Note 2): Frequency when modulation light power decreases by 3dB from 1 MHz.
1
2004-01-06