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| TK40E10N1 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – Switching Voltage Regulators | |||
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TK40E10N1
6.4. Source-Drain Characteristics (Ta = 25î unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC)
(Note 5)
IDR
î¥
Reverse drain current (pulsed)
(Note 5)
IDRP
î¥
Diode forward voltage
VDSF IDR = 40 A, VGS = 0 V
Reverse recovery time
Reverse recovery charge
(Note 6)
(Note 6)
trr
IDR = 40 A, VGS = 0 V
Qrr
-dIDR/dt = 100 A/µs
Note 5: Ensure that the channel temperature does not exceed 150î.
Note 6: Ensure that VDS peak does not exceed VDSS.
7. Marking
Min Typ. Max Unit
î¥
î¥
40
A
î¥
î¥
171
î¥
î¥
-1.2
V
î¥
67
î¥
ns
î¥
130
î¥
nC
Fig. 7.1 Marking
4
2012-02-01
Rev.2.0
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