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| TIM7785-6UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET | |||
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TIM7785-6UL
Power Dissipation vs. Case Temperature
IM3 vs. Output Power Characteristics
VDS= 10V
IDSâ
1.6A
f= 8.1GHz
âf= 5MHz
Po(dBm), Single Carrier Level
4
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