TIM7785-6UL Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM7785-6UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25_°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-11D1B)
RATING
15
-5
5.0
32.6
175
-65 to +175
4-C1.2
(2)
0.6±0.15
(1)
(2)
Unit in mm
(1) Gate
(2) Source
(3) Drain
(3)
17±0.3
21±0.2
11.0 MAX.
12
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2