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TIM7785-45SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET | |||
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TIM7785-45SL
Power Dissipation(PT) vs. Case Temperature(Tc)
140
120
100
80
60
40
0
40
80
120
160
200
Tc( °C )
IM3 vs. Output Power Characteristics
-10
VDS=10V
IDSâ
9.6A
-20 freq.=8.5GHz
âf=5MHz
-30
-40
-50
-60
30
32
34
36
38
40
Pout(dBm) @Single carrier level
4
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