TIM7785-45SL Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM7785-45SL
FEATURES
n LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 35.5dBm
Single Carrier Level
n HIGH POWER
P1dB=46.5dBm at 7.7GHz to 8.5GHz
n HIGH GAIN
G1dB=6.0dB at 7.7GHz to 8.5GHz
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT
Output Power at 1dB Gain
Compression Point
P1dB
dBm
Power Gain at 1dB Gain
Compression Point
Drain Current
G1dB
VDS=10V
dB
f = 7.7 to 8.5GHz
IDS
A
Gain Flatness
∆G
dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation
IM3
Distortion
Two-Tone Test
dBc
Po=35.5dBm
Channel Temperature Rise
(Single Carrier Level)
∆Tch ^{(VDS X IDS + Pin – P1dB)} °C
X Rth(c-c)
Recommended Gate Resistance(Rg): 28 Ω (Max.)
MIN.
46.0
5.0



-42

TYP. MAX.
46.5 
6.0 
9.6 10.8
 ±0.8
35 
-45 
 100
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT
Transconductance
gm VDS= 3V
mS
IDS= 11.0A
Pinch-off Voltage
VGSoff VDS= 3V
V
IDS= 170mA
Saturated Drain Current
IDSS VDS= 3V
A
VGS= 0V
Gate-Source Breakdown
VGSO IGS= -500µA
V
Voltage
Thermal Resistance
Rth(c-c) Channel to Case
°C/W
MIN.

-1.0

-5

TYP. MAX.
8000 
-2.5 -4.0
24 

0.8 1.2
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006