|
TIM7179-8UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET | |||
|
◁ |
TIM7179-8UL
POWER DISSIPATION vs. CASE TEMPERATURE
50
40
30
20
10
0
0
40
80
120
160
200
Tc (â)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-20
VDS= 10V
IDSâ
2.2A
f= 7.5GHz
âf= 5MHz
-30
-40
-50
-60
24
26
28
30
32
34
Po(dBm), Single Carrier Level
4
|