TIM7179-8UL Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM7179-8UL
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage
( Ta= 25°C )
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-11D1B)
RATING
15
-5
7.0
37.5
175
-65 ∼ +175
4-C1.2
d
0.6±0.15
c
d
Unit in mm
c Gate
d Source
e Drain
e
17±0.3
21±0.2
11.0 MAX.
12
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
2