TIM6472-25UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz

TIM6472-25UL
Power Dissipation vs. Case Temperature
120
100
80
60
40
20
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDS≅ 6.8A
f= 6.8GHz
Δf= 5MHz
-30
-40
-50
-60
28
30
32
34
36
38
Po(dBm), Single Carrier Level
4