TIM6472-25UL Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM6472-25UL
FEATURES
„ HIGH POWER
P1dB=44.5dBm at 6.4GHz to 7.2GHz
„ HIGH GAIN
G1dB=9.5dB at 6.4GHz to 7.2GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT
Output Power at 1dB Gain
P1dB
dBm
Compression Point
Power Gain at 1dB Gain
G1dB
VDS= 10V
dB
Compression Point
Drain Current
IDSset=5.2A
IDS1
f = 6.4 to 7.2GHz
A
Gain Flatness
ΔG
dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation
IM3
Two-Tone Test
dBc
Distortion
Po=33.5dBm
Drain Current
IDS2
(Single Carrier Level)
A
Channel Temperature Rise
ΔTch
(VDS X IDS + Pin – P1dB)
°^C
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25_°C )
MIN.
43.5
8.5
⎯
⎯
⎯
-44
⎯
⎯
TYP. MAX.
44.5 ⎯
9.5 ⎯
6.8 7.6
⎯ ±0.6
37 ⎯
-47 ⎯
5.2 6.0
⎯ 80
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITIONS
gm VDS= 3V
IDS= 8.0A
VGSoff VDS= 3V
IDS= 80mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -280μA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
⎯ 5.0 ⎯
V -1.0 -2.5 -4.0
A
⎯ 14.4 ⎯
V
-5 ⎯ ⎯
°^C/W ⎯ 1.2 1.5
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2009