TIM6472-12UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM6472-12UL
POWER DISSIPATION vs. CASE TEMPERATURE
100
80
60
40
20
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-20
VDS= 10V
IDS≅ 3.2A
f= 6.8GHz
∆f= 5MHz
-30
-40
-50
-60
25
27
29
31
33
35
Po(dBm), Single Carrier Level
4