TIM6472-12UL Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM6472-12UL
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C )
Channel Temperature
Storage
( Ta= 25°C )
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-16G1B)
RATING
15
-5
10.0
62.5
175
-65 ∼ +175
4 – C1.0
0.7±0.15
Unit in mm
Gate
Source
Drain
20.4±0.3
24.5 MAX.
16.4 MAX.
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
2