TIM5964-80SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM5964-80SL
Power Dissipation(PT) vs. Case Temperature(Tc)
250
200
100
0
0
40
80
120
160
200
Tc( _°C )
IM3 vs. Power Characteristics
0
VDS=10V
IDSset≅10.0A
-10 ^freq.=6.4GHz
Δf=5MHz
-20
-30
-40
-50
38
40
42
44
46
48
Pout(dBm) @Single carrier level
4