TIM5964-80SL Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM5964-80SL
Preliminary
FEATURES
„ LOW INTERMODULATION DISTORTION
IM3=-30 dBc at Pout= 42.0dBm
Single Carrier Level
„ HIGH POWER
P1dB=49.0dBm at 5.9GHz to 6.4GHz
„ HIGH GAIN
G1dB=7.0dB at 5.9GHz to 6.4GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS SYMBOL CONDITIONS
UNIT
Output Power at 1dB Gain
Compression Point
P1dB
dBm
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
G1dB
VDS= 10V
dB
IDSset=10.0A
IDS1
f = 5.9 to 6.4GHz
A
ΔG
dB
ηadd
%
3rd Order Intermodulation
IM3
Distortion
Two-Tone Test
dBc
Po=42.0dBm
Drain Current
IDS2
(Single Carrier Level)
A
Channel Temperature Rise ΔTch ^{(VDS X IDS +Pin-P1dB)} °C
X Rth(c-c)
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL
CONDITIONS
UNIT
Transconductance
gm VDS= 3V
S
IDS= 12.0A
Pinch-off Voltage
VGSoff VDS= 3V
V
IDS= 200mA
Saturated Drain Current
IDSS VDS= 3V
A
VGS= 0V
Gate-Source Breakdown
Voltage
Thermal Resistance
VGSO IGS= -1.0mA
Rth(c-c) Channel to Case
V
°^C/W
MIN.
48.0
6.0
⎯
⎯
⎯
-25
⎯
⎯
MIN.
⎯
-1.0
⎯
-5
⎯
TYP. MAX.
49.0 ⎯
7.0 ⎯
18.0 20.0
⎯ ±0.8
35 ⎯
-30 ⎯
⎯ 16.0
⎯ 100
TYP. MAX.
20 ⎯
-1.8 -3.0
38 ⎯
⎯⎯
0.5 0.6
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Aug. 2006