TIM5964-6UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM5964-6UL
Power Dissipation vs. Case Temperature
50
40
30
20
10
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDS≅ 1.6A
f= 6.15GHz
Δf= 5MHz
-30
-40
-50
-60
22
24
26
28
30
32
34
Po(dBm), Single Carrier Level
4