TIM5964-6UL Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCE
TIM5964-6UL
Output Power vs. Frequency
41
VDS= 10V
IDS≅ 1.6A
40 _{Pin= 28dBm}
39
38
37
36
5.7 5.8 5.9
6 6.1 6.2 6.3 6.4 6.5 6.6
Frequency (GHz)
Output Power vs. Input Power
40
f= 6.15GHz
39
VDS= 10V
IDS≅ 1.6A
Po
38
37
36
ηadd
35
34
33
32
31
22
24
26
28
30
Pin (dBm)
90
80
70
60
50
40
30
20
10
0
32
3