TIM5964-35SLA-251 Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET TIM5964-35SLA-251

TIM5964-35SLA-251
POWER DISSIPATION vs. CASE TEMPERATURE
120
100
80
60
40
20
0
0
40
80
120
160
200
Tc(°C)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-10
VDS= 10 V
IDS≅ 8 A
f= 6.325GHz
-20 ^{∆f= 5MHz}
-30
-40
-50
-60
30
32
34
36
38
40
Po(dBm), Single Carrier Level
4