TIM5964-35SLA-251 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET TIM5964-35SLA-251

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
„ LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Po= 35.0dBm,
Single Carrier Level
„ HIGH POWER
P1dB=45.5dBm at 5.9GHz to 6.75GHz
MICROWAVE POWER GaAs FET
TIM5964-35SLA-251
„ HIGH EFFICIENCY
ηadd=39% at 5.9 to 6.75GHz
„ HIGH GAIN
G1dB=8.5dB at 5.9GHz to 6.75GHz
„ BROAD BAND INTERNALLY MATCHED
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL
CONDITION
UNIT MIN. TYP. MAX.
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
P1dB
G1dB
dBm 45.0 45.5 
VDS= 10V
f = 5.9 – 6.75GHz
dB 8.0 9.0 
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
IDS1
∆G
ηadd
IM3
Two Tone Test
Po=35.0dBm
A
 8.0 9.0
dB   ±0.8
%
 39 
dBc -42 -45 
Drain Current
Channel Temperature Rise
IDS2 (Single Carrier Level) A
∆Tch VDS X IDS X Rth(c-c) °C
 8.0 9.0
  100
Recommended gate resistance(Rg) : Rg=Rg1(10 Ω)+Rg2(18 Ω)= 28 Ω (MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
CONDITION
gm VDS= 3V
IDS= 10.5A
VGSoff VDS= 3V
IDS= 140mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -420µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS  6500 
V -1.0 -2.5 -4.0
A
 20 26
V
-5


°C/W  1.0 1.3
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Revised Aug. 2000