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TIM5359-60SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET | |||
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TIM5359-60SL
Power Dissipation(PT) vs. Case Temperature(Tc)
200
100
0
0
40
80
120
160
200
Tc( °C )
IM3 vs. Power Characteristics
-10
VDS=10V
IDSsetâ
9.5A
-20 freq.=5.9GHz
Îf=5MHz
-30
-40
-50
-60
32
34
36
38
40
42
Pout(dBm) @Single carrier level
4
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