TIM5359-60SL Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCE
TIM5359-60SL
Output Power (Pout) vs. Frequency
VDS=10V
50 ^{IDS≅13.2A}
Pin=39.0dBm
49
48
47
5.3 5.4 5.5 5.6 5.7 5.8 5.9
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
51
freq.=5.9GHz
50 _VDS=10V
IDSset≅9.5A
49
48
Pout
47
46
45
ηadd
44
43
42
33
35
37
39
41
Pin(dBm)
3
90
80
70
60
50
40
30
20
43