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TIM5359-4UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET | |||
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TIM5359-4UL
Power Dissipation vs. Case Temperature
30
20
10
0
0
40
80
120
160
200
Tc (â)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDSâ
1.1A
f= 5.9GHz
Îf= 5MHz
-30
-40
-50
-60
21
23
25
27
29
31
Po(dBm), Single Carrier Level
4
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