TIM5359-4UL Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM5359-4UL
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=10V
IDS≅1.1A
Pin=26.0dBm
37
36
35
34
5.3 5.4 5.5 5.6 5.7 5.8 5.9
Frequency (GHz)
Output Power(Pout) vs. Input Power(Pin)
39
freq.=5.9GHz
38 _VDS=10V
IDS≅1.1A
37
36
Pout
35
34
33
ηadd
32
31
30
20
22
24
26
28
Pin (dBm)
80
70
60
50
40
30
20
10
30
3