TIM4450-4UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM4450-4UL
POWER DISSIPATION vs. CASE TEMPERATURE
30
20
10
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-20
VDS= 10V
IDS≅ 1.1A
f= 4.7GHz
∆f= 5MHz
-30
-40
-50
-60
21
23
25
27
29
31
Po(dBm), Single Carrier Level
4