TIM4450-4UL Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM4450-4UL
FEATURES
„ HIGH POWER
P1dB=36.5dBm at 4.4GHz to 5.0GHz
„ HIGH GAIN
G1dB=11.0dB at 4.4GHz to 5.0GHz
„ BROAD BAND INTERNALLY MATCHED
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P1dB
CONDITION
G1dB
IDS1
∆G
ηadd
IM3
IDS2
∆Tch
VDS= 10V
f = 4.4 – 5.0GHz
Two Tone Test
Po= 25.5dBm
(Single Carrier Level)
VDS X IDS X Rth(c-c)
UNIT
dBm
dB
A
dB
%
dBc
A
°C
MIN.
35.5
10.0



-44


TYP. MAX.
36.5 
11.0 
1.1 1.3
 ±0.6
37 
-47 
1.1 1.3
 80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
CONDITION
gm VDS= 3V
IDS= 1.5A
VGSoff VDS= 3V
IDS= 15mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -50µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
mS  900 
V -1.0 -2.5 -4.0
A
 2.6 3.5
V
-5  
°C/W  4.5 6.0
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Apr. 2000