TIM4450-35SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM4450-35SL
Power Dissipation vs. Case Temperature
120
100
80
60
40
20
0
0
40
80
120
160
200
Tc(°C)
IM3 vs. Output Power Characteristics
-10
VDS=10V
IDS≅ 8 A
-20 ^freq.=4.7GHz
Δf=5MHz
-30
-40
-50
-60
30
32
34
36
38
40
Pout(dBm) @Single carrier level
4