TIM4450-35SL Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCE
TIM4450-35SL
Output Power vs. Frequency
47
VDS= 10 V
IDS≅ 8 A
46 ^{Pin= 36.0 dBm}
45
44
43
42
4.4 4.5 4.6 4.7 4.8 4.9 5.0
Frequency (GHz)
f=4.7 GHz
48 ^{VDS= 10 V}
IDS≅ 8 A
Output Power vs. Input Power
46
Po
44
42
ηadd
40
30
32
34
36
38
Pin(dBm)
90
70
50
30
10
40
3