TIM1414-5L Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-5L
Power Dissipation(PT) vs. Case Temperature(Tc)
40
30
20
10
0
0
40
80
120
160
200
Tc( _°C )
IM3 vs. Output Power Characteristics
-10 _{VDS= 9 V}
IDS≅2.0A
f= 14.25GHz
-20 ^{Δf= 5MHz}
-30
-40
-50
-60
22
24
25
27
29
31
Po(dBm), Single Carrier Level
4