TIM1414-5L Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-5L
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=9V
39 IDS≅2.0A
Pin=31.5dBm
38
37
36
35
14.0
14.25
14.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
40
freq.=14.25GHz
39 _VDS=9V
IDS≅2.0A
38
37
36
Pout
35
34
33
ηadd
32
31
24
26
28
30
32
Pin(dBm)
70
60
50
40
30
20
10
0
34
3