TIM1414-2L Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-2L
Power Dissipation(PT) vs. Case Temperature(Tc)
25
20
15
10
0
0
40
80
120
160
200
Tc( _°C )
IM3 vs. Output Power Characteristics
-10 _{VDS= 9 V}
IDS≅0.85A
f= 14.5GHz
-20 ^{Δf= 5MHz}
-30
-40
-50
-60
17
19
21
23
25
27
Po(dBm), Single Carrier Level
4