TIM1414-2L Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-2L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25_°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 _°C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°^C
°^C
PACKAGE OUTLINE (2-9D1B)
RATING
15
-5
2.6
25
175
-65 to +175
Unit: mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2