TIM1414-2-252 Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz

TIM1414-2-252
Power Dissipation(PT) vs. Case Temperature(Tc)
36
20
0
0
40
80
120
160
200
Tc( _°C )
4