TIM1414-2-252 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz

RF PERFORMANCE
TIM1414-2-252
Output Power (Pout) vs. Frequency
VDS=9V
34 IDS≅0.85A
Pin=27.0 dBm
33
32
31
30
13.75
14.1
14.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
37
freq.=14.5GHz
36 _VDS=9V
IDS≅0.85A
35
34
33
Pout
32
31
30
ηadd
29
28
20
22
24
26
28
Pin(dBm)
3
80
60
40
20
0
30