TIM1314-9L Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – IM3(Min.)=−25dBc at Po=33dBm Single Carrier Level

TIM1314-9L
Power Dissipation(PT) vs. Case Temperature(Tc)
40
30
20
10
0
0
40
80
120
160
200
Tc( _°C )
IM3 vs. Output Power Characteristics
0
VDS=9V
freq.=14.5GHz
-10
Δf=5MHz
-20
-30
-40
-50
28
30
32
34
36
38
Pout(dBm) @Single carrier level
4