TIM1314-9L Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – IM3(Min.)=−25dBc at Po=33dBm Single Carrier Level

RF PERFORMANCE
TIM1314-9L
Output Power (Pout) vs. Frequency
VDS=9V
41 IDS≅2.8A
Pin=33.5 dBm
40
39
38
37
13.75 14.0 14.25 14.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
42
freq.=14.5GHz
41 _VDS=9V
IDS≅2.8A
40
39
Pout
38
37
36
35
ηadd
34
33
27
29
31
33
35
Pin(dBm)
3
50
40
30
20
10
37