TIM1011-5L Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

POWER DISSIPATION vs. CASE TEMPERATURE
50
TIM1011-5L
40
30
20
10
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-10
VDS= 9V
IDS≅ 2.0A
f=11.2 GHz
-20 ∆f= 5MHz
-30
-40
-50
-60
22
24
26
28
30
32
Po (dBm), Single Carrier
Po(dBm), Single Carrier
4