TIM1011-5L Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1011-5L
Output Power vs. Frequency
41 VDS= 9V
40
ID^VDS=^SVD2⁼.^S0⁹⁼A^V9V
P^Ii^Dn^S=_PID^â‰3_inS1²₌.^˺5^.0₃d₁^AB^2.5.m^0dABm
39 Pin = 30.5 dBm
38
37
36
35
9.7 10.2 10.7 11.2 11.7 12.2 12.7
Frequency (GHz)
Output Power vs. Input Power
41
90
f = 11.7 GHz
40
80
VDS = 9 V
39 IDS ≅ 2.0 A
70
38
60
37
50
36
40
35
30
34
20
33
10
32
0
25
27
29
31
33
35
Pin (dBm)
3