TCD1001P Datasheet, PDF (4/11 Pages) Toshiba Semiconductor – TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device)

Note 7: DC signal output voltage and DC compensation output voltage are defined as follows:
TCD1001P
OPERATING CONDITION
CHARACTERISTICS
SYMBOL MIN TYP. MAX UNIT
Master Clock Pulse Voltage
Clock Pulse Voltage
Shift Pulse Voltage
Sample and Hold Switch Voltage*
Power Supply Voltage (Analog)
Power Supply Voltage (Digital)
“H” Level
“L” Level
“H” Level
“L” Level
“H” Level
“L” Level
“H” Level
“L” Level
V_φM
4.5
5.0
5.5
V
0
―
0.5
V_φ1
4.5
5.0
5.5
V
V_φ2
0
―
0.5
V_SH
V_φ−0.5 Vφ
Vφ
V
0
―
0.5
4.5
5.0 13.0
V_SP
V
0
―
0.5
V_AD
V_DD1
V_DD2
11.4 12.0 13.0
V
11.4 12.0 13.0
V
11.4 12.0 13.0
*:
Supply “H” Level to V_SP terminal when sample−and−hold circuit is used, when sample−and−hold circuit is
not used supply “L” Level to V_SP terminal.
CLOCK CHARACTERISTICS (Ta = 25°C)
CHARACTERISTICS
Master Clock Pulse Frequency
Clock Pulse Frequency
Master Clock Pulse Capacitance
Clock Capacitance
Shift Gate Capacitance
SYMBOL
f_φM
f_φ
C_φM
C_φ
C_SH
MIN TYP. MAX UNIT
―
2.0
6.0 MHz
―
1.0
3.0 MHz
―
10
20
pF
―
100 200
pF
―
50
100
pF
4
2002-03-08