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TCD1001P Datasheet, PDF (3/11 Pages) Toshiba Semiconductor – TOSHIBA CCD LINEAR IMAGE SENSOR CCD(Charge Coupled Device)
TCD1001P
OPTICAL / ELECTRICAL CHARACTERISTICS
(Ta = 25°C, VAD = VDD1 = VDD2 = 12V, VφM = Vφ = VSH = 5V (PULSE), fφ = 1.0MHz,
tINT (INTEGRATION TIME) = 10ms, LIGHT SOURCE = DAYLIGHT FLUORESCENT LAMP,
LOAD RESISTANCE = 100kΩ)
CHARACTERISTICS
SYMBOL MIN TYP. MAX UNIT
NOTE
Sensitivity
Photo Response Non Uniformity
Saturation Output Voltage
Saturation Exposure
Dark Signal Voltage
Dark Signal Non Uniformity
Analog Current Dissipation
Digital Current Dissipation
Total Transfer Efficiency
Output Impedance
DC Signal Output Voltage
DC Compensation Output Voltage
DC Differential Error Voltage
R
PRNU (1)
PRNU (3)
VSAT
SE
VDRK
DSNU
IAD
IDD1
IDD2
TTE
ZO
VOS
VDOS
|VOS−VDOS|
63.7
―
―
1.2
―
―
―
―
―
―
92
―
3.5
3.5
―
85
―
3
2.0
0.02
4
2
8.0
―
10.0
―
0.5
5.0
5.0
―
106 V / lx·s
10
%
12
mV
―
V
―
lx·s
8
mV
5
mV
12
mA
1
mA
15
mA
―
%
1.0
kΩ
6.5
V
6.5
V
400 mV
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 6)
(Note 7)
(Note 7)
Note 2: PRNU (1) is measured at 50% of SE (Typ.)
Definition of PRNU : PRNU = Dc ´100%
c
Where ? is average of total signal outputs and ,? is the maximum deviation from ? under uniform
illumination.
Note 3: PRNU (3) is defined as maximum voltage with next pixel where measured 5% of SE (Typ.)
Note 4: VSAT is defined as minimum Saturation Output Voltage of all effective pixels.
Note 5: Definition of SE : SE =
VSAT
R
lx × s
Note 6: VDRK is defined as average dark signal voltage of all effective pixels.
DSNU is defined as different voltage between VDRK and VMDK when VMDK is maximum dark signal voltage.
3
2002-03-08