TC7WG00FK_09 Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WG00FU/FK
AC Characteristics (unless otherwise specified, Input: t_r = t_f = 3 ns)
Characteristics
Propagation delay time
Input capacitance
Power dissipation
capacitance
Symbol Test Condition
C_L = 10 pF,
R_L = 1 MΩ
t_pLH
t_pHL
C_L = 15 pF,
R_L = 1 MΩ
C_L = 30 pF,
R_L = 1 MΩ
C_IN
⎯
V_CC (V)
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to
1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
3.6
C_PD
(Note 13) 0.9 to 3.6
Ta = 25°C
Min
Typ
Max
⎯
26.9
⎯
⎯
10.9 20.7
⎯
2.9
9.6
⎯
4.5
7.0
⎯
2.9
4.4
⎯
2.2
3.5
⎯
30.0
⎯
⎯
12.0 24.2
⎯
6.5
10.5
⎯
5.0
7.7
⎯
3.2
4.9
⎯
2.5
3.8
⎯
45.0
⎯
⎯
18
33.4
⎯
8.9
14.8
⎯
6.9
10.3
⎯
4.4
6.4
⎯
3.5
4.9
⎯
3
⎯
⎯
10
⎯
Ta = −40 to 85°C
Unit
Min
Max
⎯
⎯
1.0
38.6
1.0
11.3
1.0
7.5
1.0
4.9
1.0
4.1
⎯
⎯
1.0
42.0
1.0
12.6
ns
1.0
8.0
1.0
5.6
1.0
4.4
⎯
⎯
1.0
63.2
1.0
17.9
1.0
10.8
1.0
6.8
1.0
5.4
⎯
⎯
pF
⎯
⎯
pF
Note 13: C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I_{CC (opr.)} = C_PDï½¥V_CCï½¥f_IN + I_CC/2
4
2009-07-09