TC7WG00FK_09 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WG00FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WG00FU,TC7WG00FK
Dual 2-Input NAND Gate
Features
• High output current
: ±8 mA (min) at V_CC = 3 V
• Super high speed operation : tpd = 2.5 ns (typ.)
at V_CC = 3.3 V,15pF
• Operating voltage range : V_CC = 0.9 to 3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs
TC7WG00FU
TC7WG00FK
(SM8)
Marking
SM8
G 00
Product Name
US8
Lot No.
WG
00
(US8)
Weight:
SSOP8-P-0.65
SSOP8-P-0.50A
: 0.02 g (typ.)
: 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Pin Assignment (top view)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/GND current
Power dissipation
Storage temperature
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
Rating
Unit
−0.5 to 4.6
V
−0.5 to 7.0
V
−0.5 to 4.6 (Note1)
V
−0.5 to V_CC+0.5 (Note2)
−20
mA
−20 (Note 3) mA
±25
mA
±50
mA
300 (SM8)
mW
200 (US8)
−65 to 150
°C
1A 1
1B 2
2Y 3
GND 4
8 V_CC
7 1Y
6 2B
5 2A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: V_CC = 0 V
Note 2: High or Low state.
Note 3: V_OUT < GND
Do not exceed I_OUT of absolute maximum ratings.
1
2009-07-09