TC7SH00F_09 Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – 2-Input NAND Gate

TC7SH00F/FU
AC Characteristics (unless otherwise specified, Input: t_r = t_f = 3 ns)
Characteristics
Symbol
t_pLH
Propagation delay time
t_pHL
Input capacitance
C_IN
Power dissipation capacitance C_PD
Test Condition
V_CC (V) C_L(pF)
15
3.3 ± 0.3
50
15
5.0 ± 0.5
50
⎯
(Note 2)
Ta = 25°C
Ta = −40 to 85°C
Unit
Min Typ. Max Min. Max.
⎯
5.5
7.9
1.0
9.5
⎯
8.0
11.4
1.0
13.0
ns
⎯
3.7
5.5
1.0
6.5
⎯
5.2
7.5
1.0
8.5
⎯
4
10
⎯
10
pF
⎯
14
⎯
⎯
⎯
pF
Note 2:
C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I_{CC (opr.)} = C_PDï½¥V_CCï½¥f_IN + I_CC
4
2009-09-09