TC7SH00F_09 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – 2-Input NAND Gate

TC7SH00F/FU
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH00F, TC7SH00FU
2-Input NAND Gate
Features
• High speed operation : t_{pd =} 3.7ns (typ.) at V_CC = 5V, 15pF
• Low power dissipation : I_CC = 2μA (max) at Ta = 25°C
• 5.5-V tolerant inputs
• Balanced propagation delays : t_pLH ≈ t_pHL
• Wide operating voltage range : V_CC = 2 to 5.5V
TC7SH00F
TC7SH00FU
(SMV)
Marking
Product name
H1
Weight
SSOP5-P-0.95
SSOP5-P-0.65A
(USV)
: 0.016 g (typ.)
: 0.006 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V_CC/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
T_stg
T_L
Rating
Unit
− 0.5 to 7.0
V
− 0.5 to 7.0
V
− 0.5 to V_CC+0.5
V
− 20
mA
± 20 (Note 1) mA
± 25
mA
± 50
mA
200
mW
− 65 to 150
°C
260
°C
Pin Assignment (top view)
IN B 1
IN A 2
GND 3
5 V_CC
4 OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V_OUT <GND, V_OUT > V_CC
1
2009-09-09