English
Language : 

TC74HC564AP_07 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic Octal D-Type Filp-Flop with 3-State Output
Operating Ranges (Note)
TC74HC564AP/AF,574AP/AF
Characteristics
Symbol
Rating
Unit
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
VCC
VIN
VOUT
Topr
tr, tf
2 to 6
V
0 to VCC
V
0 to VCC
V
−40 to 85
°C
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
ns
0 to 400 (VCC = 6.0 V)
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
High-level input
voltage
VIH
Test Condition
Ta = 25°C
Ta =
−40 to 85°C Unit
VCC (V) Min Typ. Max Min Max
2.0 1.50 ⎯
⎯ 1.50 ⎯
⎯
4.5 3.15 ⎯
⎯ 3.15 ⎯
V
6.0 4.20 ⎯
⎯ 4.20 ⎯
Low-level input
voltage
VIL
2.0
⎯
⎯ 0.50 ⎯ 0.50
⎯
4.5
⎯
⎯
1.35
⎯
1.35
V
6.0
⎯
⎯ 1.80 ⎯ 1.80
2.0
1.9 2.0
⎯
1.9
⎯
High-level output
voltage
IOH = −20 μA
4.5
4.4 4.5
⎯
4.4
⎯
VOH
VIN
= VIH or VIL
6.0
5.9 6.0
⎯
5.9
⎯
V
IOH = −6 mA
4.5 4.18 4.31 ⎯ 4.13 ⎯
IOH = −7.8 mA
6.0 5.68 5.80 ⎯ 5.63 ⎯
2.0
⎯
0.0 0.1
⎯
0.1
Low-level output
voltage
3-state output
off-state current
Input leakage
current
IOL = 20 μA
VOL
VIN
= VIH or VIL
IOL = 6 mA
IOL = 7.8 mA
VIN = VIH or VIL
IOZ
VOUT = VCC or GND
IIN
VIN = VCC or GND
4.5
⎯
0.0 0.1
⎯
0.1
6.0
⎯
0.0 0.1
⎯
0.1
V
4.5
⎯ 0.17 0.26 ⎯ 0.33
6.0
⎯ 0.18 0.26 ⎯ 0.33
6.0
⎯
⎯ ±0.5 ⎯ ±5.0 μA
6.0
⎯
⎯ ±0.1 ⎯ ±1.0 μA
Quiescent supply
current
ICC
VIN = VCC or GND
6.0
⎯
⎯
4.0
⎯ 40.0 μA
4
2007-10-01