TC74AC245P_07 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuit Silicon Monolithic

TC74AC245,640P/F/FT
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
High-level input
voltage
V_IH
Test Condition
―
Ta =
Ta = 25°C
−40 to 85°C
Unit
V_CC
(V)
Min
Typ.
Max
Min
Max
2.0 1.50 ―
― 1.50 ―
3.0 2.10 ―
― 2.10 ―
V
5.5 3.85 ―
― 3.85 ―
Low-level input
voltage
V_IL
2.0 ―
― 0.50 ― 0.50
―
3.0 ―
― 0.90
― 0.90
V
5.5 ―
― 1.65 ― 1.65
2.0 1.9 2.0
―
1.9
―
High-level output
voltage
V_OH
I_OH = −50 μA
V_IN
= V_IH or
V_IL
I_OH = −4 mA
I_OH = −24 mA
3.0 2.9 3.0
―
2.9
―
4.5 4.4 4.5
―
4.4
―
V
3.0 2.58 ―
― 2.48 ―
4.5 3.94 ―
― 3.80 ―
I_OH = −75 mA (Note) 5.5 ―
―
― 3.85 ―
2.0 ―
0.0 0.1
―
0.1
Low-level output
voltage
3-state output
off-state current
Input leakage
current
I_OL = 50 μA
V_IN
V_OL
= V_IH or
V_IL
I_OL = 12 mA
3.0 ―
0.0 0.1
―
0.1
4.5 ―
0.0 0.1
―
0.1
V
3.0 ―
― 0.36 ― 0.44
I_OL = 24 mA
4.5 ―
― 0.36 ― 0.44
I_OL = 75 mA (Note) 5.5 ―
―
―
― 1.65
V_IN = V_IH or V_IL
I_OZ
V_OUT = V_CC or GND
5.5 ―
― ±0.5 ― ±5.0 μA
I_IN
V_IN = V_CC or GND
5.5 ―
― ±0.1 ― ±1.0 μA
Quiescent supply
current
I_CC
V_IN = V_CC or GND
5.5 ―
―
8.0
― 80.0 μA
Note:
This spec indicates the capability of driving 50 Ω transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
4
2007-10-01