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TC4011BF_12 Datasheet, PDF (4/8 Pages) Toshiba Semiconductor – TC4011B Quad 2 Input NAND Gate
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TC4011BP/BF/BFT
Dynamic Electrical Characteristics (Ta = 25°C, VSS = 0 V, CL = 50 pF)
Characteristics
Output transition time
Output transition time
Propagation delay time
Propagation delay time
Input capacitance
Symbol
tTLH
tTHL
tpLH
tpHL
CIN
Test Condition
―
―
―
―
―
Min Typ. Max Unit
VDD (V)
5
―
70 200
10
―
35 100 ns
15
―
30
80
5
―
70 200
10
―
35 100 ns
15
―
30
80
5
―
65 200
10
―
30 100 ns
15
―
25
80
5
―
65 200
10
―
30 100 ns
15
―
25
80
―
5
7.5
pF
Circuit and Waveform for Measurement of Dynamic Characteristics
Circuit
Waveform
20 ns
20 ns
P.G.
Input
VDD
Output
CL = 50 pF
VSS
Input
Output
90%
50%
10%
90%
50%
10%
tTHL
tTLH
90%
50%
10%
90%
50%
10%
tpHL
tpLH
4
2012-02-29
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