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TC4011BF_12 Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – TC4011B Quad 2 Input NAND Gate | |||
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TC4011BP/BF/BFT
Static Electrical Characteristics (VSS = 0 V)
Characteristics Symbol
Test Condition
â40°C
25°C
85°C
VDD
(V)
Min
Max
Min
Typ.
Max
Min
Max
Unit
High-level
output voltage
VOH
|IOUT| < 1 μA
VIN = VSS, VDD
5 4.95 â 4.95 5.00 â 4.95 â
10 9.95 â 9.95 10.00 â 9.95 â
V
15 14.95 â 14.95 15.00 â 14.95 â
Low-level
output voltage
|IOUT| < 1 μA
VOL
VIN = VSS, VDD
5 â 0.05 â 0.00 0.05 â 0.05
10 â
0.05
â 0.00 0.05 â
0.05
V
15 â 0.05 â 0.00 0.05 â 0.05
Output high
current
VOH = 4.6 V
VOH = 2.5 V
IOH
VOH = 9.5 V
VOH = 13.5 V
5 â0.61 â â0.51 â1.0 â â0.42 â
5 â2.50 â â2.10 â4.0 â â1.70 â
10 â1.50 â â1.30 â2.2 â â1.10 â
mA
15 â4.00 â â3.40 â9.0 â â2.80 â
Output low
current
VIN = VSS, VDD
VOL = 0.4 V
VOL = 0.5 V
IOL
VOL = 1.5 V
5 0.61 â 0.51 1.2
â 0.42 â
10 1.50 â 1.30 3.2
â 1.10 â
mA
15 4.00 â 3.40 12.0 â 2.80 â
Input high
voltage
VIN = VDD
VOUT = 0.5 V
VOUT = 1.0 V
VIH
VOUT = 1.5 V
5 3.5
â
3.5 2.75 â
3.5
â
10 7.0
â
7.0 5.50 â
7.0
â
V
15 11.0 â 11.0 8.25 â 11.0 â
Input low
voltage
|IOUT| < 1 μA
VOUT = 4.5 V
VOUT = 9.0 V
VIL
VOUT = 13.5 V
5â
1.5
â 2.25 1.5
â
1.5
10 â
3.0
â 4.50 3.0
â
3.0
V
15 â
4.0
â 6.75 4.0
â
4.0
Input
current
âHâ
level
âLâ
level
|IOUT| < 1 μA
IIH
VIH = 18 V
IIL
VIL = 0 V
18 â
0.1
â
10â5
0.1
â
1.0
μA
18 â
â0.1
â â10â5 â0.1
â
â1.0
Quiescent
supply current
5 â 0.25 â 0.001 0.25 â
7.5
VIN = VSS, VDD
IDD
10 â 0.50 â 0.001 0.50 â 15.0 μA
(Note)
15 â 1.00 â 0.002 1.00 â 30.0
Note: All valid input combinations.
3
2012-02-29
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