SSM6P47NU_14 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI)

(Q1, Q2 Common)
10
Common Source
VDS = -3 V
Ta = 25°C
Pulse Test
3
|Y_fs| – I_D
1
0.3
0.1
-0.01
-0.1
-1
-10
Drain current I_D (A)
C – V_DS
1000
300
Ciss
100
30
Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
-0.1
-1
Coss
Crss
-10
-100
Drain-source voltage V_DS (V)
SSM6P47NU
10
Common Source
VGS = 0 V
Pulse Test
D
1
G
I_DR
I_DR – V_DS
0.1
S
-25 °C
Ta =100 °C
0.01
25 °C
0.001
0
0.5
1.0
1.5
Drain–source voltage V_DS (V)
10000
toff
1000
tf
100
t – I_D
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
10 ^ton
tr
1
-0.001
-0.01
-0.1
-1
-10
Drain current I_D (A)
Dynamic Input Characteristic
-8
Common Source
ID = -3.5 A
Ta = 25°C
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
2
4
6
8
10
Total gate charge Qg (nC)
4
2014-03-01