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SSM6P47NU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) | |||
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SSM6P47NU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI)
SSM6P47NU
Power Management Switch Applications
⢠1.5V drive
⢠Low ON-resistance: RDS(on) = 242 m⦠(max) (@VGS = -1.5 V)
RDS(on) = 170 m⦠(max) (@VGS = -1.8 V)
RDS(on) = 125 m⦠(max) (@VGS = -2.5 V)
RDS(on) = 95 m⦠(max) (@VGS = -4.5 V)
2.0±0.1
Unit: mm
B
A
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
0ï½0.05
0.13
Characteristics
Drain-Source voltage
Symbol
VDSS
Rating
Unit
â20
V
*BOTTOM VIEW
1
0.65 0.65
0.95
2
3
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
â4.0
A
Pulse
IDP (Note 1)
â8.0
Power dissipation (Note 2)
PD
1
W
t < 10s
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
â55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of
6
0.3±0.075
0.05 M A B
5
4
0.65±0.075 0.65±0.075
0.05 M A B
1. Source1 4. Source2
2. Gate1 5. Gate2
UDFN6
3. Drain2 6. Drain1
JEDEC
â
high temperature/current/voltage and the significant change in
JEITA
â
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2Y1A
operating temperature/current/voltage, etc.) are within the
Weight: 8.5 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150 °C during use.
Note 2: Total rating
Mounted on an FR4 board.
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 645 mm2)
Marking(Top View)
65 4
PP4
Equivalent Circuit(Top View)
6
5
4
Pin Condition(Top View)
D1 G2 S2
Q1
Q2
D1
D2
1 23
Polarity marking
1
2
3
1
S1 G1 D2
Polarity marking (on the top)
*Electrodes : on the bottom
Start of commercial production
2010-06
2014-03-01
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