SSM6K405TU_14 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

10
Common Source
VDS = 3 V
Ta = 25°C
3
|Y_fs| – I_D
1
0.3
0.1
0.01
0.1
1
10
Drain current I_D (A)
1000
C – V_DS
500
300
Ciss
100
50
30 ^{Common Source}
Ta = 25°C
f = 1 MHz
VGS = 0 V
10
0.1
1
Coss
Crss
10
100
Drain–source voltage V_DS (V)
SSM6K405TU
10
Common Source
V_GS = 0 V
D
1
G
I_DR
I_DR – V_DS
0.1
S
Ta =100 °C
0.01
25 °C
0.001
0
−25 °C
–0.2
–0.4
–0.6 –0.8 –1.0 –1.2
Drain–source voltage V_DS (V)
1000
toff
100
tf
t – I_D
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7Ω
10 _ton
tr
1
0.01
0.1
1
10
Drain current I_D (A)
Dynamic Input Characteristic
10
Common Source
ID = 2.0 A
8
Ta = 25°C
6
VDD=10V VDD=16V
4
2
0
0
2
4
6
8
10
Total Gate Charge Qg (nC)
4
2014-03-01